An electrically injected InAsÕGaAs quantum-dot photonic crystal microcavity light-emitting diode
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چکیده
An electrically injected InAs/GaAs self-organized quantum-dot photonic crystal microcavity light-emitting diode operating at 1.04 mm is demonstrated. Light–current characteristics are obtained for devices with twoand five-defect period cavities with maximum light output of 0.17 mW measured in the surface-normal direction. Near-field images were also obtained for an injection current of 8.35 mA, showing light confinement within a few periods of the photonic crystal defect microcavity. © 2002 American Institute of Physics. @DOI: 10.1063/1.1521249#
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تاریخ انتشار 2002